WTPA24A60BW rev. b nov.2008 t01-3 cop yright@winsemi semiconductor co.,ltd.,all rights reserved. bi-directional bi-directional bi-directional bi-directional triode triode triode triode thyristor thyristor thyristor thyristor features features features features repetitive peak off-state voltage:600v r.m.s on-state current(i t(rms) = 24 a low on-state voltage: v tm =1. 55 v( max .)@ i t = 11 a high commutation dv/dt. general general general general description description description description general purpose switching and phase control applications. these devices are intended to be interfaced directly to micro- controllers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay. by using an internal ceramic pad, the w t p a series provides voltage insulated tab (rated at 2500v rms) absolute absolute absolute absolute maximum maximum maximum maximum ratings ratings ratings ratings (tj=25 unless otherwise specified) note1: note1: note1: note1: . although not recommended, off-state voltages up to 800v may be applied without damage, but the triac may switch to the on-state. the rate of rise of current should not exceed 3a/us. thermal thermal thermal thermal characteristics characteristics characteristics characteristics symbol symbol symbol symbol parameter parameter parameter parameter value value value value units units units units v drm peak repetitive forward blocking voltage (gate open) ( note 1) 6 00 v i t(rms) forward current rms (all conduction angles , tc=58 ) 24 a i tsm peak forward surge current, (1/2 cycle, sine wave, 50/ 60 hz) 250 / 260 a i 2 t circuit fusing considerations (t p = 10 ms) 340 a 2 s p gm peak gate power forward, ( t c = 58 c ,pulse with 1.0us) 5 w p g(av) average gate power forward, (over any 20ms period) 1 w i fgm peak gate current forward, t j = 1 25 c ( 2 0 s, 120 pps) 4 a v rgm peak gate voltage reverse , t j = 1 25 c ( 2 0 s, 120 pps) 10 v t j, junction temperature -40~125 t stg storage temperature -40~150 symbol symbol symbol symbol parameter parameter parameter parameter value value value value units units units units min min min min typ typ typ typ max max max max r qjc thermal resistance, junction-to-case - - 1.7 /w r qja thermal resistance, junction-to-ambient - - 60 /w
WTPA24A60BW 8 2 / 5 cop yright @ winsemi semiconductor co., ltd., all rights reserved. electrical electrical electrical electrical characteristics characteristics characteristics characteristics (tc = 25 c unless otherwise specified ) note 2. forward current applied for 1 ms maximum duration, duty cycle symbol characteristics min typ. max unit i drm / /i rrm peak forward or reverse blocking current ( v drm = v rrm, ) tc=25 - - 5 a tc=125 - - 3 ma v tm forward on voltage(note2) (i tm = 35 a peak @ ta = 25 c) - - 1. 55 v i gt gate trigger current (continuous dc) (v d = 12 vdc, rl = 33 ) t2+g+ t2+g- t2-g- - - - - - - 50 50 50 ma v gt gate trigger voltage (continuous dc) (v d = 12 vdc, rl = 33 ) t2+g+ t2+g- t2-g- - - - - - - 1. 2 1. 2 1. 2 v v gd gate threshold voltage(tj=125 , v d = v drm , rl = 3.3k ) 0.2 - - v dv/dt critical rate of rise of commutation voltage (v d =0.67v drm ) 1000 - - v/ s d i com /dt critical rate of rise on-state voltage(v d =400v,tj=125 ) 22 - - a/ s i h holding current (i t = 50 0 ma) - - 8 0 ma i l i g =1.2i gt - - 100 ma r d dynamic resistance - - 16 m
WTPA24A60BW 3 / 5 cop yright @ winsemi semiconductor co., ltd., all rights reserved. fig. fig. fig. fig. 6 6 6 6 fig. fig. fig. fig. 5 5 5 5 fig. fig. fig. fig. 3 3 3 3 fig. fig. fig. fig. 4 4 4 4 fig. fig. fig. fig. 1 1 1 1 fig. fig. fig. fig. 2 2 2 2
WTPA24A60BW 8 4 / 5 cop yright @ winsemi semiconductor co., ltd., all rights reserved. fig. fig. fig. fig. 8 8 8 8 fig. fig. fig. fig. 9 9 9 9 fig. fig. fig. fig. 1 1 1 1 0 0 0 0 gate gate gate gate trigger trigger trigger trigger characteristics characteristics characteristics characteristics test test test test circuit circuit circuit circuit fig. fig. fig. fig. 7 7 7 7
WTPA24A60BW 5 / 5 cop yright @ winsemi semiconductor co., ltd., all rights reserved. to- to- to- to- 220 220 220 220 package package package package dimension dimension dimension dimension unit: mm
|
